In the sophisticated ecosystem of VLSI (Very Large Scale Integration), the Tungsten-Titanium (WTi) alloy sputtering target serves as a cornerstone material. As a premier China WTi PVD Target Manufacturer, we understand that these targets are not merely metal slabs; they are the genesis of the diffusion barrier layers that prevent the migration of aluminum or copper into silicon substrates. This process is vital for maintaining the electrical integrity of modern chips.
The standard composition of 90% Tungsten and 10% Titanium (by weight) offers the perfect synergy: Tungsten provides exceptional thermal stability and low resistivity, while Titanium acts as a chemical glue, enhancing adhesion to the dielectric layers. Our factory utilizes Hot Isostatic Pressing (HIP) and Vacuum Induction Melting (VIM) technologies to achieve ultra-high density (>99.5%) and micro-grain uniformity, which are essential for minimizing particle generation during the Physical Vapor Deposition (PVD) process.
We supply WTi targets with purity levels up to 99.999%, ensuring that alkali metals (Na, K) and radioactive isotopes (U, Th) are kept at sub-ppb levels to avoid threshold voltage shifts in MOS devices.
Our targets feature a single-phase microstructure or finely dispersed dual-phase morphology, guaranteeing uniform sputter rates and consistent thin-film thickness across 300mm wafers.
Optimized Ti content provides superior protection against silicon-gold or silicon-aluminum interdiffusion, even under high-temperature annealing cycles up to 450°C.
Established in the Shanghai Industrial Comprehensive Development Zone, we are a high-tech powerhouse integrating R&D, production, and sales. Our core expertise lies in semiconductor ceramic targets, powder metallurgy targets, and neutron absorption materials. With 19 years of deep-rooted experience, we have become the go-to partner for global tech giants requiring ready-to-run advanced ceramic solutions.
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As the semiconductor industry transitions from 7nm to 3nm and beyond, the demands on WTi PVD targets are evolving. Our R&D roadmap focuses on three critical pillars:
| Feature | Current Standard | Next-Gen Goal (2026+) |
|---|---|---|
| Target Purity | 4N5 - 5N (99.99% - 99.999%) | 6N (99.9999%) Ultra-Low Alpha |
| Grain Size | < 100 μm | < 30 μm Nano-Crystalline |
| Relative Density | > 99% | > 99.9% Theoretical Density |
Future semiconductor architectures, including GAAFET and CFET, require even thinner and more robust barrier layers. We are currently developing Rotary WTi Targets for large-area coating and Doped WTi alloys to enhance thermal stability for AI-driven high-performance computing (HPC) chips.
WTi layers are crucial for RF filters and power amplifiers (GaN/SiC devices) where heat dissipation and high-frequency stability are non-negotiable.
Ensuring the longevity of power management ICs (PMICs) in electric vehicles, where harsh environments demand superior adhesion properties provided by our WTi targets.
Used in the metallization of high-efficiency solar cells (HJT/TOPCon) to serve as a contact layer that prevents metal atoms from poisoning the silicon junction.
Enabling the miniaturization of MEMS sensors through ultra-thin barrier layers, ensuring reliable performance in consumer electronics.
The global industrial landscape has shifted towards regional supply chain security. As a leading China factory, we leverage the country's vast mineral resources and integrated industrial ecosystem to offer a unique competitive edge:
Controlling purity, particle size, and chemical composition stability to ensure raw material consistency.
Monitoring slurry concentration and loose tap density for optimal powder performance.
Automated pressing gives the blank better strength and uniformity.
Advanced methods: Hot Pressing, Pressureless, and Isostatic Sintering.
Imported high-precision equipment ensures strict dimensional tolerances.
CMM size testing, ceramic performance, and powder analysis for 100% compliance.
Semiconductor-grade cleaning and dust-free packaging prevent contamination.
Global export qualifications and established logistics partnerships for rapid shipment.
The most common industry standard is 90% Tungsten (W) and 10% Titanium (Ti) by weight. However, we can customize the ratio (e.g., 80/20 or 95/5) based on specific barrier layer requirements.
We achieve this through high-density sintering (up to 99.9% relative density) and ultra-fine grain size control. This reduces "nodule" formation on the target surface, which is the primary cause of particles.
We support all standard semiconductor sizes, including 200mm (8 inch) and 300mm (12 inch) targets, as well as custom shapes for R&D systems.
Yes, all our advanced ceramic and metal alloy products comply with international environmental standards, including RoHS and REACH, ensuring safe usage in global markets.
For standard 300mm targets, our lead time is typically 3-5 weeks, significantly faster than the industry average of 8-12 weeks.
