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Its core value is that it can effectively block the spread of copper atoms to the surrounding dielectric materials in high-temperature processes, and is a key barrier to maintain the electrical integrity and yield of semiconductor copper interconnect structures.
As a metal alloy barrier layer, its resistivity is much lower than that of compound barriers such as titanium nitride, which helps reduce the RC delay of interconnect wires in integrated circuits.
By adjusting the Ti/Mo ratio, the work function can be adjusted within a certain range to meet the specific needs of different optoelectronic devices for matching the energy level of the electrode interface.
The deposited film exhibits strong adhesion to silicon, silica, glass, and various polymer substrates, making it ideal for solving interlayer adhesion problems.
The film has both high hardness and good toughness, which can significantly enhance the anti-wear and scratch resistance of the protected workpiece, and extend the service life.
The thin film structure is not prone to grain coarsening or phase change in high-temperature environments, and can withstand erosion from various chemical environments, ensuring the reliability of devices under harsh conditions.
The optimized alloy composition significantly improves the ion bombardment efficiency during sputtering, resulting in higher deposition rates and material utilization.
Thanks to the microstructure of the target with high density (≥ 99.5% theoretical density) and fine grains (typically ≤ 30 μm), high-quality film deposition with highly uniform film thickness distribution (inhomogeneity ≤ 5%), smooth surface, and very low defect density can be achieved.
Ultra-high purity raw materials (≥ 99.95%) and tightly controlled low gas content (oxygen, nitrogen, etc.) ensure a stable sputtering process, minimize micro-arcing and particle jetting, and reduce film defects.
Copper atoms tend to migrate easily into surrounding dielectric materials under high temperatures, which can damage electrical properties. The alloy barrier layer blocks this diffusion to maintain structural and electrical integrity.
This metal alloy barrier layer provides much lower resistivity than traditional compound barriers like titanium nitride. This helps significantly reduce the RC delay of interconnect wires in integrated circuits.
Yes, by tuning the Ti/Mo ratio, the work function can be adjusted within a specific range. This flexibility allows engineers to match the precise energy level requirements of various optoelectronic devices.
The film exhibits excellent interfacial bonding and adhesion to a wide range of substrates, including silicon, silica, glass, and various polymers, resolving common interlayer adhesion challenges.
The uniformity (thickness inhomogeneity ≤ 5%) is achieved through the target's high density (≥ 99.5% theoretical density) and fine grains (typically ≤ 30 μm), resulting in smooth surfaces and minimal defects.
Using ultra-high purity raw materials (≥ 99.95%) and keeping gas content strictly low ensures a stable sputtering process. This reduces micro-arcing, minimizes particle jetting, and decreases overall film defects.
