The prepared alumina film features exceptionally high resistivity (>10¹⁴ Ω·cm) and a dielectric strength of approximately 10 MV/cm, making it an ideal choice for insulation and dielectric layers.
With a Mohs hardness of 9 (second only to diamond), the film significantly improves the scratch and wear resistance of device surfaces, along with offering excellent corrosion resistance to acids, alkalis, and solvents.
A high target density (≥3.6 g/cm³), ultra-high purity (≥99.9%), and uniform grain size minimize defects and ensure a highly uniform thickness (inhomogeneity ≤5%) during sputtering.
Yes. Because of its extremely high melting point (2054°C), the prepared alumina films can operate stably in high-temperature environments without experiencing degradation.
The sputtering process has a wide process window and is highly compatible with inert gas (Ar), reactive gas (O₂), or mixed gas environments.
The film demonstrates excellent adhesion to a wide range of substrates, including silicon wafers, glass, and metals, making it versatile for both functional and protective layers.