Industrial-grade solutions for high-frequency and high-power applications
In the rapidly evolving landscape of high-power electronics, the Coefficient of Thermal Expansion (CTE) of substrate materials has become the ultimate bottleneck for system reliability. As a premier China Aluminum Nitride Supplier, we understand that AlN is not merely an insulator; it is the thermal bridge that prevents catastrophic failure in semiconductor modules.
Aluminum Nitride (AlN) possesses a unique combination of high thermal conductivity (170-230 W/m·K) and a CTE (4.5 × 10⁻⁶/K) that closely matches Silicon (2.6–3.3 × 10⁻⁶/K) and Gallium Nitride (GaN). This synergy reduces mechanical stress during thermal cycling, ensuring that multi-layer power modules do not delaminate under the intense heat of AI computing and EV inverters.
Optimizing heat dissipation in SiC inverters to extend vehicle range and reduce charging times by maintaining CTE stability at 200°C+.
Providing AlN substrates for RF front-end modules where signal integrity depends on the physical dimensional stability of the carrier.
Meeting SWaP (Size, Weight, and Power) requirements for satellite communication systems operating in extreme vacuum thermal cycles.
Shanghai Creative Advanced Materials Co., Ltd. (SCA) is a high-tech powerhouse integrated into the Shanghai Industrial Comprehensive Development Zone.
We specialize in semiconductor ceramic targets, powder metallurgy, and neutron absorption materials. Our focus on Aluminum Nitride CTE optimization stems from nearly two decades of R&D, serving global leaders in the semiconductor and polymer material sectors.
Years Experience
Patented Tech
Experts
Global Clients
Bridging the gap between raw powder and high-precision sintered components
As semiconductor fabs migrate to larger wafer sizes, the demand for 300mm (12-inch) high-purity targets has surged. Our technical roadmap focuses on achieving 5N5 (99.9995%) purity while maintaining a controlled grain size of <100μm to ensure uniform film thickness during physical vapor deposition (PVD).
Ceramic Components Excellence
Powder Metallurgy Mastery
Nano-scale Ceramic Powders
The next frontier for China Aluminum Nitride factories is the integration of "Active Metal Brazing" (AMB) and "Direct Copper Bonding" (DCB) directly onto AlN substrates. Our current R&D focuses on dopant-controlled AlN, which allows for a tunable CTE to match wide-bandgap (WBG) materials more precisely than standard commercial grades.
Ensuring CTE stability through rigorous process management
Controlling purity, particle size, and chemical stability to ensure the foundation of high-performance AlN.
Monitoring slurry concentration and particle distribution for uniform density.
Automated pressing for consistent blank strength and dimensional accuracy.
Hot pressing, pressureless, and reaction sintering tailored for specific CTE requirements.
Imported high-precision equipment ensures tolerances within microns.
Equipped with CMM size testing and advanced ceramic performance analysis.
Dust-free workshops prevent contamination for semiconductor-grade products.
Licensed export qualifications and reliable global logistics partners.
Operating from Shanghai, we provide seamless local support for global manufacturers. Our compliance framework includes:
In the Chinese market, we are heavily involved in the "Semiconductor Self-Sufficiency" initiative, providing high-purity targets for domestic fabs. Internationally, we focus on providing high-reliability AlN CTE carriers for automotive power modules, where environmental conditions range from -40°C to 175°C.
Expert insights into Aluminum Nitride and CTE management
Supporting diverse industrial needs with advanced metallurgy and ceramics
