A: The formed film features outstanding thermal stability and chemical inertness, resisting oxidation at high temperatures, and can operate at temperatures exceeding 1000°C.
A: It is compatible with a wide range of substrates, including silicon, glass, and ceramics, and provides strong adhesion that prevents peeling.
A: The grain size is small and uniform, typically controlled between 10 to 40μm to ensure low surface roughness and minimize defects.
A: Yes, it supports low-temperature deposition (which can run below 200°C), making it suitable for flexible substrates and heat-sensitive functional devices.
A: Yes, it is fully compatible with multi-step integration processes, including lithography, etching, and chemical mechanical planarization (CMP).
A: It exhibits excellent deposition consistency and stability in both DC magnetron sputtering and High-Power Impulse Magnetron Sputtering (HiPIMS) processes.