Engineered for Precision and High-Performance Applications
In the ultra-precision world of Physical Vapor Deposition (PVD), the Tungsten (W) sputtering target stands as a cornerstone material. As global semiconductor nodes shrink toward 3nm and beyond, the demand for 5N (99.999%) and 6N purity tungsten has transitioned from a luxury to a technical necessity. Tungsten's unique properties—including its incredibly high melting point (3422°C), low coefficient of thermal expansion, and excellent electrical conductivity—make it the preferred choice for diffusion barriers and gate electrodes in VLSI (Very Large Scale Integration) circuits.
At Shanghai Creative Advanced Materials, we recognize that chemical purity is only half the battle. Information gain in PVD performance comes from microstructural engineering. By utilizing advanced vacuum hot-pressing and cold isostatic pressing (CIP) technologies, we control the average grain size of our W targets to below 100μm. This refined grain structure ensures a more uniform sputtering rate across the entire 300mm wafer surface, significantly reducing the "nodule" formation that typically plagues lower-quality targets.
Our W targets are optimized for the latest generation of sputtering systems (e.g., Endura, Centura), providing the dimensional stability required for large-format 12-inch wafer processing.
High relative density (near theoretical) minimizes internal pores, preventing gas entrapment and ensuring a stable plasma environment during the PVD process.
We provide full GDMS (Glow Discharge Mass Spectrometry) reports for every batch, monitoring alkali metals and radioactive isotopes (U, Th) to levels below 1ppb.
China holds over 80% of the world's tungsten reserves, primarily in the form of Wolframite and Scheelite. This proximity to raw material sources gives Shanghai Creative Advanced Materials an unparalleled cost-to-performance ratio. Unlike Western suppliers who must import raw concentrates, our integrated supply chain allows us to monitor quality from the initial APT (Ammonium Paratungstate) stage through to the finished sputtering target.
Navigating international trade requires more than just high-quality products. We adhere strictly to ISO 9001:2015 and ISO 14001 standards. For our European and North American clients, we ensure full compliance with RoHS and REACH regulations, providing conflict-free material sourcing certifications (RMI). Our logistics team is expert in handling Export Control Classification Numbers (ECCN) for dual-use materials, ensuring seamless customs clearance for high-tech components.
The industry is shifting toward High-Power Impulse Magnetron Sputtering (HiPIMS). Our targets are specifically designed to withstand the higher thermal stresses of HiPIMS, preventing cracking or debonding from backing plates. Additionally, we are developing W-Ti (Tungsten-Titanium) and W-Si (Tungsten-Silicide) alloys to meet the evolving barrier requirements of 3D NAND and AI-accelerator chips.
Used for contact plugs and vias in multilevel metal interconnects, providing low resistance and high reliability for logic chips.
In CIGS and Perovskite solar technologies, tungsten layers act as critical back contacts or barrier layers against moisture and oxygen.
Tungsten oxide (WO3) derived from sputtered targets is the core active layer in energy-efficient smart windows for modern architecture.
Advanced Solutions for Global Supply Chains
