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By changing the doping ratio of Mg (x value), the bandgap can be continuously adjusted between 3.37 eV for ZnO and 7.8 eV for MgO, which is key to realizing ultraviolet photonic devices.
The material maintains the high transparency of ZnO, with a transmittance greater than 80% in the visible light region, making it suitable for transparent electronic devices.
Under appropriate Mg content and processing conditions, high-quality hexagonal wurtzite structure crystalline films can be formed, ensuring device performance.
High density (≥5.6 g/cm³) and high purity (≥99.99%) ensure stable sputtering process, high film quality, and minimal particle generation.
Advanced sintering technology ensures that Zn and Mg elements are evenly distributed in the target material, allowing for accurate composition transfer during the sputtering process.
Can be deposited under room to medium temperature conditions, compatible with various semiconductor processes.
The introduction of MgO enhances the thermal stability and corrosion resistance of the material, making it suitable for harsher working environments.
The intrinsic MZO film has high resistivity, making it an ideal choice for preparing buffer layers in semiconductor devices. Conductivity can be achieved through doping with elements like Al and Ga.
